APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 1-8 q1 to q4 absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v i c continuous collector current t c = 25c 150 a t c = 80c 100 i cm pulsed collector current t c = 25c 200 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 560 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1600v these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 0/vbus out cr6 cr5 neutral vbus e3e4 g3 g1g2 e2 q4 q3 g4 e1 q1q2 e1 neutral e4 out 0/vbus g2 e2 g1 g3 e3 vbus g4 v ces = 1700v i c = 100a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt power module cr1 cr2 cr3 cr4 downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 2-8 all ratings @ t j = 25c unless otherwise specified q1 to q4 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 350 a v ce(sat) collector emitter saturation voltage v ge = 15v i c = 100a t j = 25c 2.0 2.4 v t j = 125c 2.4 v ge ( th ) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 500 na q1 to q4 dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 9 nf c oes output capacitance 0.36 c res reverse transfer capacitance 0.3 q g gate charge v ge =15v, i c =100a v ce =900v 1.2 c t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 370 ns t r rise time 40 t d(off) turn-off delay time 650 t f fall time 180 t d(on) turn-on delay time inductive switching (125c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 400 ns t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 e on turn-on switching energy v ge = 15v v bus = 900v i c = 100a r g = 4.7 t j = 125c 32 mj e off turn-off switching energy t j = 125c 31 i sc short circuit data v ge 15v ; v bus = 1000v t p 10s ; t j = 125c 400 a r thjc junction to case thermal resistance 0.22 c/w downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 3-8 cr1 to cr4 diode rating s and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v i rm maximum reverse leakage current v r =1700v t j = 25c 350 a t j = 125c 600 i f dc forward current tc = 80c 100 a v f diode forward voltage i f = 100a t j = 25c 1.8 2.2 v t j = 125c 1.9 t rr reverse recovery time i f = 100a v r = 900v di/dt =1600a/s t j = 25c 385 ns t j = 125c 490 q rr reverse recovery charge t j = 25c 28 c t j = 125c 46 e rr reverse recovery energy t j = 25c 12 mj t j = 125c 24 r thjc junction to case thermal resistance 0.39 c/w cr5 & cr6 diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v i rm maximum reverse leakage current v r =1700v t j = 25c 350 a t j = 125c 600 i f dc forward current tc = 80c 150 a v f diode forward voltage i f = 150a t j = 25c 1.8 2.2 v t j = 125c 1.9 t rr reverse recovery time i f = 150a v r = 900v di/dt =1600a/s t j = 25c 385 ns t j = 125c 490 q rr reverse recovery charge t j = 25c 38 c t j = 125c 62 e rr reverse recovery energy t j = 25c 17.5 mj t j = 125c 35 r thjc junction to case thermal resistance 0.26 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for terminals m5 2 3.5 wt package weight 300 g downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 4-8 sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com q1 to q4 typical performance curve (per igbt) hard switching zcs zvs 0 5 10 15 20 25 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 5-8 output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 40 80 120 160 200 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse dura tion 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 6-8 cr1 to cr4 typical performance curve (per diode) energy losses vs collector current 5 10 15 20 25 30 35 0 40 80 120 160 200 i f (a) e rr (mj) v ce = 900v r g = 4.7 ? t j = 125c 10 15 20 25 0 1 02 03 04 05 0 gate resistance (ohms) e rr (mj) v ce = 900v i f = 100a t j = 125c switching energy losses vs gate resistance forward characteristic of diode t j =25c t j =125c t j =125c 0 40 80 120 160 200 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) downloaded from: http:///
APTGT100TL170G APTGT100TL170G C rev 2 october 2012 www.microsemi.com 7-8 cr5 & cr6 typical performance curve (per diode) energy losses vs collector current 0 10 20 30 40 50 60 0 50 100 150 200 250 300 i f (a) err (mj) v ce = 900v t j = 125c maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) . downloaded from: http:///
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